SUM40N02-12P
Vishay Siliconix
SPECIFICATIONS (T J =25 _ C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
V (BR)DSS
V GS(th)
I GSS
V DS = 0 V, I D = 250 m A
V DS = V GS , I D = 250 m A
V DS = 0 V, V GS = " 20 V
20
0.85
2
3
" 100
V
nA
V DS = 20 V, V GS = 0 V
1
Zero Gate Voltage Drain Current
I DSS
V DS = 20 V, V GS = 0 V, T J = 125 _ C
50
m A
V DS = 20 V, V GS = 0 V, T J = 175 _ C
250
On-State Drain Current a
I D(on)
V DS w 5 V, V GS = 10 V
V GS = 10 V, I D = 20 A
90
0.0095
0.012
A
Drain-Source On-State Resistance a
Forward Transconductance a
r DS(on)
g fs
V GS = 10 V, I D = 20 A, T J = 125 _ C
V GS = 10 V, I D = 20 A, T J = 175 _ C
V GS = 4.5 V, I D = 15 A
V DS = 15 V, I D = 20 A
10
0.021
0.0175
0.022
0.026
W
S
Dynamic b
Input Capacitance
C iss
1000
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge b
Gate-Source Charge b
Gate-Drain Charge b
C oss
C rss
Q g
Q gs
Q gd
V GS = 0 V, V DS = 10 V, f = 1 MHz
V DS = 10 V, , V GS = 4.5 V, , I D = 40 A
370
180
7.5
3.5
2.6
12
pF
nC
Gate Resistance
Turn-On Delay Time b
Rise Time b
Turn-Off Delay Time b
Fall Time b
R g
t d(on)
t r
t d(off)
t f
V DD = 10 V, R L = 0.25 W
I D ^ 40 A, V GEN = 10 V, R g = 2.5 W
1.5
3.0
11
10
24
9
5.1
20
15
35
15
W
ns
Source-Drain Diode Ratings and Characteristics (T C = 25 _ C) c
Continuous Current
Pulsed Current
I S
I SM
40
90
A
Forward Voltage a
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
V SD
t rr
I RM
Q rr
I F = 40 A, V GS = 0 V
I F = 40 A, di/dt = 100 A/ m s
1.1
20
0.7
0.007
1.5
40
1.1
0.022
V
ns
A
m C
Notes
a. Pulse test; pulse width v 300 m s, duty cycle v 2%.
b. Independent of operating temperature.
c. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 72111
S-42351—Rev. D, 20-Dec-04
相关PDF资料
SUM60N02-3M9P-E3 MOSFET N-CH D-S 20V D2PAK
SUM70N03-09CP-E3 MOSFET N-CH D-S 30V D2PAK
SUM85N03-06P-E3 MOSFET N-CH D-S 30V D2PAK
SUM90N06-5M5P-E3 MOSFET N-CH D-S 60V D2PAK
SUM90N08-6M2P-E3 MOSFET N-CH D-S 75V D2PAK
SUM90N08-7M6P-E3 MOSFET N-CH D-S 75V D2PAK
SUM90N10-8M2P-E3 MOSFET N-CH D-S 100V D2PAK
SUP18N15-95-E3 MOSFET N-CH 150V 18A TO220-3
相关代理商/技术参数
SUM40N03-30L 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) 175C MOSFET
SUM40N03-30L-E3 功能描述:MOSFET 30V 40A 100W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SUM40N05-19L 制造商:Vishay Angstrohm 功能描述:Trans MOSFET N-CH 55V 40A 3-Pin(2+Tab) TO-263
SUM40N05-19L-E3 功能描述:MOSFET 55V 40A 65W 19mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SUM40N10-30 功能描述:MOSFET 100V 40A 107W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SUM40N10-30_08 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 100-V (D-S) 175 °C MOSFET
SUM40N10-30-E3 功能描述:MOSFET 100V 40A 107W 30mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SUM40N15-38 制造商:Vishay Intertechnologies 功能描述:Trans MOSFET N-CH 150V 40A 3-Pin(2+Tab) TO-263